Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors

Du Zen Peng*, Ting Chang Chang, Chun Yen Chang, Ming Liang Tsai, Chun Hao Tu, Po-Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.

Original languageEnglish
Pages (from-to)1926-1932
Number of pages7
JournalJournal of Applied Physics
Volume93
Issue number4
DOIs
StatePublished - 15 Feb 2003

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