Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

Chien Tai Chan*, Chun Jung Tang, Ta-Hui Wang, Howard C.H. Wang, Denny D. Tang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Drain current degradation in HfSiON gate dielectric nMOSFETs by positive gate bias and temperature stress is investigated by using a fast transient measurement technique. The degradation exhibits two stages, featuring a different degradation rate and stress temperature dependence. The first-stage degradation is attributed to the charging of preexisting high-k dielectric traps and has a log(t) dependence on stress time, whereas the second-stage degradation is mainly caused by new high-k trap creation. The high-k trap growth rate is characterized by two techniques, namely 1) a recovery transient technique and 2) a charge-pumping technique. Finally, the effect of processing on high-k trap growth is evaluated.

Original languageEnglish
Pages (from-to)1340-1346
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume53
Issue number6
DOIs
StatePublished - 1 Jun 2006

Keywords

  • HfSiON
  • Positive bias temperature instability (PBTI)
  • Transient measurement
  • Trap generation
  • Two-stage degradation

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