Characteristics and mechanisms of silicon-oxide-based resistance random access memory

Kuan Chang Chang*, Tsung Ming Tsai, Ting Chang Chang, Hsing Hua Wu, Jung Hui Chen, Yong En Syu, Geng Wei Chang, Tian Jian Chu, Guan Ru Liu, Yu Ting Su, Min Chen Chen, Jhih Hong Pan, Jian Yu Chen, Cheng Wei Tung, Hui Chun Huang, Ya-Hsiang Tai, Der Shin Gan, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.

Original languageEnglish
Article number6461910
Pages (from-to)399-401
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number3
DOIs
StatePublished - 22 Feb 2013

Keywords

  • Filament
  • resistive switch
  • silicon oxide
  • Zn

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