Characteristic fluctuations of dynamic power delay induced by random nanosized titanium nitride grains and the aspect ratio effect of gate-all-around nanowire CMOS devices and circuits

Yi-Ming Li*, Chieh Yang Chen, Min Hui Chuang, Pei Jung Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of theGAANWcomplementary metal-oxide-semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. The experimentally validated device and circuit simulation running on a parallel computing system are intensively performed while considering the effects of WKF and various ARs to access the device's nominal and fluctuated characteristics. To provide the best accuracy of simulation, we herein calibrate the simulation results and experimental data by adjusting the fitting parameters of the mobility model. Transfer characteristics, dynamic timing, and power consumption of the tested circuit are calculated using a mixed device-circuit simulation technique. The timing fluctuation mainly follows the trend of the variation of threshold voltage. The fluctuation terms of power consumption comprising static, short-circuit, and dynamic powers are governed by the trend that the larger the grain size, the larger the fluctuation.

Original languageEnglish
Article number1492
JournalMaterials
Volume12
Issue number9
DOIs
StatePublished - 8 May 2019

Keywords

  • Aspect ratio of channel cross-section
  • CMOS circuit
  • DC and AC characteristic fluctuations
  • Gate-all-around
  • MOSFETs
  • Nanowire
  • Noise margin fluctuation
  • Power fluctuation
  • Statistical device simulation
  • Timing fluctuation
  • Work function fluctuation

Fingerprint Dive into the research topics of 'Characteristic fluctuations of dynamic power delay induced by random nanosized titanium nitride grains and the aspect ratio effect of gate-all-around nanowire CMOS devices and circuits'. Together they form a unique fingerprint.

Cite this