Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions

Wen Li Sung; Yiming Li

Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions

Wen Li Sung, Yiming Li

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.

Original language	English
Title of host publication	Informatics, Electronics and Microsystems - TechConnect Briefs 2017
Editors	Fiona Case, Matthew Laudon, Bart Romanowicz, Fiona Case
Publisher	TechConnect
Pages	43-46
Number of pages	4
ISBN (Electronic)	9780998878218
State	Published - 2017
Event	11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States Duration: 14 May 2017 → 17 May 2017

Publication series

Name	Advanced Materials - TechConnect Briefs 2017
Volume	4

Conference

Conference	11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
Country	United States
City	Washington
Period	14/05/17 → 17/05/17

Keywords

Characteristic fluctuation
Gate-all-around
MOSFET
Nanowire
Penetration
Random discrete dopants
Source/drain extensions
Undoped channel

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Cite this

Sung, W. L., & Li, Y. (2017). Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions. In F. Case, M. Laudon, B. Romanowicz, & F. Case (Eds.), Informatics, Electronics and Microsystems - TechConnect Briefs 2017 (pp. 43-46). (Advanced Materials - TechConnect Briefs 2017; Vol. 4). TechConnect.

Sung, Wen Li ; Li, Yiming. / Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions. Informatics, Electronics and Microsystems - TechConnect Briefs 2017. editor / Fiona Case ; Matthew Laudon ; Bart Romanowicz ; Fiona Case. TechConnect, 2017. pp. 43-46 (Advanced Materials - TechConnect Briefs 2017).

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title = "Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions",

abstract = "In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.",

keywords = "Characteristic fluctuation, Gate-all-around, MOSFET, Nanowire, Penetration, Random discrete dopants, Source/drain extensions, Undoped channel",

author = "Sung, {Wen Li} and Yiming Li",

year = "2017",

language = "English",

series = "Advanced Materials - TechConnect Briefs 2017",

publisher = "TechConnect",

pages = "43--46",

editor = "Fiona Case and Matthew Laudon and Bart Romanowicz and Fiona Case",

booktitle = "Informatics, Electronics and Microsystems - TechConnect Briefs 2017",

note = "null ; Conference date: 14-05-2017 Through 17-05-2017",

}

Sung, WL & Li, Y 2017, Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions. in F Case, M Laudon, B Romanowicz & F Case (eds), Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Advanced Materials - TechConnect Briefs 2017, vol. 4, TechConnect, pp. 43-46, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference, Washington, United States, 14/05/17.

Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions. / Sung, Wen Li; Li, Yiming.

Informatics, Electronics and Microsystems - TechConnect Briefs 2017. ed. / Fiona Case; Matthew Laudon; Bart Romanowicz; Fiona Case. TechConnect, 2017. p. 43-46 (Advanced Materials - TechConnect Briefs 2017; Vol. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.

AB - In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.

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KW - Gate-all-around

KW - MOSFET

KW - Nanowire

KW - Penetration

KW - Random discrete dopants

KW - Source/drain extensions

KW - Undoped channel

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A2 - Case, Fiona

A2 - Laudon, Matthew

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