@inproceedings{6b149642cbd241af8b2e56c5bd6c034d,
title = "Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions",
abstract = "In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.",
keywords = "Characteristic fluctuation, Gate-all-around, MOSFET, Nanowire, Penetration, Random discrete dopants, Source/drain extensions, Undoped channel",
author = "Sung, {Wen Li} and Yiming Li",
year = "2017",
language = "English",
series = "Advanced Materials - TechConnect Briefs 2017",
publisher = "TechConnect",
pages = "43--46",
editor = "Fiona Case and Matthew Laudon and Bart Romanowicz and Fiona Case",
booktitle = "Informatics, Electronics and Microsystems - TechConnect Briefs 2017",
note = "null ; Conference date: 14-05-2017 Through 17-05-2017",
}