Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions

Wen Li Sung, Yiming Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.

Original languageEnglish
Title of host publicationInformatics, Electronics and Microsystems - TechConnect Briefs 2017
EditorsFiona Case, Matthew Laudon, Bart Romanowicz, Fiona Case
PublisherTechConnect
Pages43-46
Number of pages4
ISBN (Electronic)9780998878218
StatePublished - 2017
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
Duration: 14 May 201717 May 2017

Publication series

NameAdvanced Materials - TechConnect Briefs 2017
Volume4

Conference

Conference11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period14/05/1717/05/17

Keywords

  • Characteristic fluctuation
  • Gate-all-around
  • MOSFET
  • Nanowire
  • Penetration
  • Random discrete dopants
  • Source/drain extensions
  • Undoped channel

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