Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature

Yiming Li, Chih Hong Hwang, Shao Ming Yu, Hsuan Ming Huang, Ta Ching Yeh, Hui Wen Cheng, Hung Ming Chen, Jiunn Ren Hwang, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, we numerically study the discrete-dopant-induced characteristic fluctuations in 16nm silicon-on-insulator (SOI) FinFETs. For devices under different temperature condition, discrete dopants are statistically generated and positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Electrical characteristics' fluctuations are growing worse when the substrate temperature increases, the standard deviation of threshold voltage increases 1.75 times when substrate temperature increases from 300K to 400K for example. This "atomistic" device simulation technique is computationally cost-effective and provides us an insight into the problem of discrete-dopant-induced fluctuation and the relation between the fluctuation and thermal effect.

Original languageEnglish
Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PublisherSpringer-Verlag Wien
Pages365-368
Number of pages4
ISBN (Print)9783211728604
DOIs
StatePublished - 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
Duration: 25 Sep 200727 Sep 2007

Publication series

Name2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Conference

Conference12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
CountryAustria
CityVienna
Period25/09/0727/09/07

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