In this paper, we study the performance of SRAM cell with three different devices, conventional planar MOSFETs, omega FinFETs, and nanowire FinFETs. Static noise margin (SNM) of 6T SRAM is computational investigated and compared by using a three-dimensional mixed-mode device-circuit coupled simulation with considering quantum mechanical effects. We firstly analyze and compare the terminal characteristics, the curves of ID-VG and I D-VD for the explored 20 nm transistors in SRAM cells. The SNM of SRAM during both hold and read modes is explored for the device with respect to different supply voltage and temperature. Effect of the channel length on the SNM and fluctuation of SNM is further investigated by using a computational statistics technique. Among three devices in the 6T SRAM cell, it is found that 6T SRAM cell with 20 nm nanowire FinFETs possesses the best and stable operation characteristics. SRAM cell fabricated with multiple-gate FinFETs is promising in sub-22 nm CMOS devices.