Characteristic comparison of SRAM cells with 20 nm planar MOSFET, omega FinFET and nanowire FinFET

Yi-Ming Li*, Chien Sung Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

In this paper, we study the performance of SRAM cell with three different devices, conventional planar MOSFETs, omega FinFETs, and nanowire FinFETs. Static noise margin (SNM) of 6T SRAM is computational investigated and compared by using a three-dimensional mixed-mode device-circuit coupled simulation with considering quantum mechanical effects. We firstly analyze and compare the terminal characteristics, the curves of ID-VG and I D-VD for the explored 20 nm transistors in SRAM cells. The SNM of SRAM during both hold and read modes is explored for the device with respect to different supply voltage and temperature. Effect of the channel length on the SNM and fluctuation of SNM is further investigated by using a computational statistics technique. Among three devices in the 6T SRAM cell, it is found that 6T SRAM cell with 20 nm nanowire FinFETs possesses the best and stable operation characteristics. SRAM cell fabricated with multiple-gate FinFETs is promising in sub-22 nm CMOS devices.

Original languageEnglish
Title of host publication2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Pages339-342
Number of pages4
StatePublished - 2006
Event2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
Duration: 17 Jun 200620 Jun 2006

Publication series

Name2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume1

Conference

Conference2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
CountryUnited States
CityCincinnati, OH
Period17/06/0620/06/06

Keywords

  • Computational statistics
  • Density-gradient equations
  • Fluctuation
  • Mixed mode simulation
  • Nanosacle conventional planar MOSFETs
  • Nanowire FinFETs
  • Omega FinFETs
  • Performance
  • SRAM
  • Static noise margin

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