A novel integrated LAMBDA -type voltage-controlled negative-differential-resistance device consisting of a bipolar-junction transistor merged with a metal-oxide-semiconductor field-effect transistor, which has been called the lambda bipolar transistor (LBT), is studied. By considering the effects of the current gain degradation, the dc model of the device is constructed, and the important device parameters such as the peak point, the negative resistance, and the valley point, are characterized. Based on the dc model and the small signal behavior of the LBT, the optimal device design considerations for micropower LBT ICs are presented. The temperature stability of the LBT is also investigated.
|Number of pages||8|
|Journal||IEE Proceedings I: Solid State and Electron Devices|
|State||Published - Jun 1981|