Channel Width Effect on MOSFET Breakdown

Y. Fong, G. C. Liang, T. Van Duzer, Chen-Ming Hu

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Wide-channel MOSFET’s have typically 10 to 30% lower breakdown voltages than narrow-width (W ≈ L) transistors and are less likely to exhibit clear snapback characteristics. These observations can be explained using a simplified model to determine the width dependence of the MOSFET substrate resistance. The normalized substrate current /sub/wrequired for source turn-on predicted by this model is found to decrease by an order of magnitude for wide-channel-width transistors in agreement with measured data. This results in the observed decrease in breakdown voltage for wide-channel MOSFET’s.

Original languageEnglish
Pages (from-to)1265-1267
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume39
Issue number5
DOIs
StatePublished - 1 Jan 1992

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