A novel programming method for FLOTOX EEPROM device is presented and investigated. The device is equivalent to an EPROM device in parallel with an EEPROM structure. With an extra negative source and substrate voltage, both channel hot-electron injection under the gate oxide of the EPROM structure and F-N tunneling under the tunnel oxide of the EEPROM structure are enhanced at programming. Moreover, the enhanced erased threshold voltages are observed under this negative source and substrate voltage. With the proper control of this biasing scheme, the select transistor in the EEPROM cell can be eliminated and the cell area can be reduced efficiently.
|Number of pages||3|
|State||Published - 1 Dec 1992|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 26 Aug 1992 → 28 Aug 1992
|Conference||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||26/08/92 → 28/08/92|