Channel hot-carrier programming in EEPROM devices

Chung-Yu Wu*, Yai Fen Lin, Lih Chyun Perng, Sen Huang Huang

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

A novel programming method for FLOTOX EEPROM device is presented and investigated. The device is equivalent to an EPROM device in parallel with an EEPROM structure. With an extra negative source and substrate voltage, both channel hot-electron injection under the gate oxide of the EPROM structure and F-N tunneling under the tunnel oxide of the EEPROM structure are enhanced at programming. Moreover, the enhanced erased threshold voltages are observed under this negative source and substrate voltage. With the proper control of this biasing scheme, the select transistor in the EEPROM cell can be eliminated and the cell area can be reduced efficiently.

Original languageEnglish
Pages173-175
Number of pages3
StatePublished - 1 Dec 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 26 Aug 199228 Aug 1992

Conference

ConferenceExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period26/08/9228/08/92

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    Wu, C-Y., Lin, Y. F., Perng, L. C., & Huang, S. H. (1992). Channel hot-carrier programming in EEPROM devices. 173-175. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .