Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications

H. Clement Wann*, Chen-Ming Hu, Kenji Noda, Dennis Sinitsky, Fariborz Assaderaghi, Jeff Bokor

*Corresponding author for this work

Research output: Contribution to conferencePaper

16 Scopus citations

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Physics & Astronomy

Chemical Compounds

Engineering & Materials Science