Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications

H. Clement Wann*, Chen-Ming Hu, Kenji Noda, Dennis Sinitsky, Fariborz Assaderaghi, Jeff Bokor

*Corresponding author for this work

Research output: Contribution to conferencePaper

15 Scopus citations

Abstract

With the scaling of the power supply voltage VDD in low voltage and low power VLSI, the threshold voltage of the MOSFET device needs to be reduced to retain the device performance in terms of current driving capability and switching speed. Recently MOSFET devices whose threshold voltages can be adapted during the transistor operation using the body effect have been proposed for low voltage and low power VLSI applications. In these devices, the threshold voltages are reduced by forward-biasing the body-to-source junction. In this paper we study the effect of the channel doping engineering on this threshold voltage reduction scheme.

Original languageEnglish
Pages159-163
Number of pages5
StatePublished - 1 Dec 1995
EventProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 31 May 19952 Jun 1995

Conference

ConferenceProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, Taiwan
Period31/05/952/06/95

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    Clement Wann, H., Hu, C-M., Noda, K., Sinitsky, D., Assaderaghi, F., & Bokor, J. (1995). Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications. 159-163. Paper presented at Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications, Taipei, Taiwan, .