With the scaling of the power supply voltage VDD in low voltage and low power VLSI, the threshold voltage of the MOSFET device needs to be reduced to retain the device performance in terms of current driving capability and switching speed. Recently MOSFET devices whose threshold voltages can be adapted during the transistor operation using the body effect have been proposed for low voltage and low power VLSI applications. In these devices, the threshold voltages are reduced by forward-biasing the body-to-source junction. In this paper we study the effect of the channel doping engineering on this threshold voltage reduction scheme.
|Number of pages||5|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 31 May 1995 → 2 Jun 1995
|Conference||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications|
|Period||31/05/95 → 2/06/95|