Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs

Hong Nien Lin*, Hung Wei Chen, Chih Hsin Ko, Chung Hu Ge, Horng-Chih Lin, Tiao Yuan Huang, Wen Chin Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms of ballistic efficiency and injection velocity.

Original languageEnglish
Pages (from-to)676-678
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number9
DOIs
StatePublished - 1 Sep 2005

Keywords

  • MOSFETs
  • Scattering
  • Uniaxial strain

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