Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain

Hong Nien Lin*, Hung Wei Chen, Chih Hsin Ko, Chung Hu Ge, Horng-Chih Lin, Tiao Yuan Huang, Wen Chin Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

Channel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory. We found that both the backscattering ratio and injection velocity are greatly influenced by the location and recess depth of SiGe source/drain. Although the strain-enhanced injection velocity is beneficial to the current gain, the accompanying backscattering ratio increase adversely impacts the overall performance, and therefore a trade-off exists between injection velocity and backscattering ratio during the optimization of such strain technique. The mechanism of increased backscattering ratio under uniaxial compressive strain is also investigated.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages147-150
Number of pages4
DOIs
StatePublished - 1 Dec 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 5 Dec 20057 Dec 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period5/12/057/12/05

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    Lin, H. N., Chen, H. W., Ko, C. H., Ge, C. H., Lin, H-C., Huang, T. Y., & Lee, W. C. (2005). Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 147-150). [1609289] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005). https://doi.org/10.1109/IEDM.2005.1609289