Cesium Azide-An Efficient Material for Green Light-Emitting Diodes with Giant Quantum Dots

Hoang Tuan Vu, Chun Yuan Huang, Chih Jung Chen, Ray Kuang Chiang, Hsin-Chieh Yu, Ying Chih Chen, Yan Kuin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN3) was compared with conventional ones including CsF, Cs2CO3, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the lowerature evaporated CsN3 provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN3-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm2) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN3-devices significantly decreased ∼ 5.5 V in comparison with LiF-devices.

Original languageEnglish
Article number7154418
Pages (from-to)2123-2126
Number of pages4
JournalIEEE Photonics Technology Letters
Volume27
Issue number20
DOIs
StatePublished - 15 Oct 2015

Keywords

  • Quantum dots (QDs)
  • alkali metal compound
  • cesium azide (CsN)
  • electron injection
  • quantum dot light-emitting diodes (QLED)

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