Cell endurance prediction from a large-area SONOS capacitor

C. H. Lee, W. H. Tu, S. H. Gu, C. W. Wu, S. W. Lin, T. H. Yeh, K. F. Chen, Y. J. Chen, J. Y. Hsieh, I. J. Huang, N. K. Zous, T. T. Han, M. S. Chen, W. P. Lu, K. C. Chen, Ta-Hui Wang, C. Y. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Endurance considerations induced by the degradation of top and bottom oxides are proposed for a SONOS memory. First, a correlation is found between the widespread C-V curves induced by interface generation and cycling numbers (cyc. #). Unlike VFB (accumulation region), VT (inversion region) shows a much severe shift. Interface state (Nit) is identified as a key factor even when a 2nm bottom oxide is used. Moreover, charge to breakdown (QBD) for an ONO capacitor under positive and negative constant current stress (CCS) is investigated. Our study reveals that QBD of such stacks strongly depends on the top oxide thickness. A field enhancement induced by charges in a trapping nitride layer is the root cause. Based on Weibull statistics, the risk of dielectric breakdown for both blocking layers is then evaluated.

Original languageEnglish
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages891-892
Number of pages2
DOIs
StatePublished - 12 Nov 2009
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 26 Apr 200930 Apr 2009

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period26/04/0930/04/09

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    Lee, C. H., Tu, W. H., Gu, S. H., Wu, C. W., Lin, S. W., Yeh, T. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H., & Lu, C. Y. (2009). Cell endurance prediction from a large-area SONOS capacitor. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 891-892). [5173373] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173373