CBE growth of InP with triethylindium and metalorganic phosphorous precursors: Bisphosphinoethane and tertiarybutyl-phosphine

Albert Chin*, Steve Hersee, Paul Martin, John Mazurowski, James Ballingall, J. A. Glass, James T. Spencer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Two metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77 K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrier densities 5.7E15 and 4.0E15 cm-3, respectively. For InP grown using TBP, the measured room temperature and 77 K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm-3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increased with cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2 K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.

Original languageEnglish
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages45-50
Number of pages6
ISBN (Print)1558991778
DOIs
StatePublished - 1 Jan 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: 30 Nov 19923 Dec 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period30/11/923/12/92

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