Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

W. J. Tsai*, S. H. Gu, N. K. Zous, C. C. Yeh, C. C. Liu, C. H. Chen, Ta-Hui Wang, Sam Pan, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

39 Scopus citations

Abstract

Data retention loss in a localized trapping storage Flash memory cell with a SONOS type structure is investigated. Both charge loss through the bottom oxide and lateral migration of trapped charges in the nitride layer are considered for the data retention loss. Charge pumping and charge separation methods are used in this study. Our results reveal that in normal operation condition the retention loss is mainly caused by charge leakage via P/E stress created oxide traps.

Original languageEnglish
Title of host publication2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages34-38
Number of pages5
ISBN (Electronic)0780373529
DOIs
StatePublished - 1 Jan 2002
Event40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
Duration: 7 Apr 200211 Apr 2002

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2002-January
ISSN (Print)1541-7026

Conference

Conference40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
CountryUnited States
CityDallas
Period7/04/0211/04/02

Keywords

  • Charge pumps
  • Data engineering
  • Density measurement
  • Electron traps
  • Electronics industry
  • Fabrication
  • Flash memory cells
  • Industrial electronics
  • SONOS devices
  • Stress

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  • Cite this

    Tsai, W. J., Gu, S. H., Zous, N. K., Yeh, C. C., Liu, C. C., Chen, C. H., Wang, T-H., Pan, S., & Lu, C. Y. (2002). Cause of data retention loss in a nitride-based localized trapping storage flash memory cell. In 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual (pp. 34-38). [996607] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2002.996607