Cation source dependence of Ga0.5In0.5P growth rate by low-pressure metalorganic chemical vapor deposition

Janne Wha Wu, Chun Yen Chang, Kun Chuan Lin, Shih Hsiung Chan, Horng Dar Chen, Po An Chen, Edward Yi Chang, Mei Shong Kuo

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Abstract

The Gao.Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium sources, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylg allium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.

Original languageEnglish
Pages (from-to)L832-L833
JournalJapanese Journal of Applied Physics
Volume33
Issue number6
DOIs
StatePublished - 1 Jan 1994

Keywords

  • EDMIn
  • GalnP
  • Low-pressure MOCVD
  • TEGa
  • TMGa
  • TMIn

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