The Gao.Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium sources, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylg allium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.
- Low-pressure MOCVD