Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

Ling Lee*, Wen Chung Fan, Jui Tai Ku, Wen-Hao Chang, Wei-Kuo Chen, Wu-Ching Chou, Chih Hsin Ko, Cheng Hsien Wu, You Ru Lin, Clement H. Wann, Chao Wei Hsu, Yung Feng Chen, Yan Kuin Su

*Corresponding author for this work

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Abstract

The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

Original languageEnglish
Article number465701
JournalNanotechnology
Volume21
Issue number46
DOIs
StatePublished - 19 Nov 2010

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    Lee, L., Fan, W. C., Ku, J. T., Chang, W-H., Chen, W-K., Chou, W-C., Ko, C. H., Wu, C. H., Lin, Y. R., Wann, C. H., Hsu, C. W., Chen, Y. F., & Su, Y. K. (2010). Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si. Nanotechnology, 21(46), [465701]. https://doi.org/10.1088/0957-4484/21/46/465701