Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy

J. S. Wang, C. S. Yang, P. I. Chen, C. F. Su, W. J. Chen, K. C. Chiu, Wu-Ching Chou

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13 Scopus citations

Abstract

This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/μm with a field enhancement factor β of around 793.

Original languageEnglish
Pages (from-to)553-557
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume97
Issue number3
DOIs
StatePublished - 1 Nov 2009

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