Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory

Shih Cheng Chen; Ting Chang Chang; Shih Yang Chen; Hung Wei Li; Yu Ting Tsai; Chi Wen Chen; S. M. Sze; Fon Shan Yeh; Ya-Hsiang Tai

doi:10.1149/1.3518710

Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory

Shih Cheng Chen^*, Ting Chang Chang, Shih Yang Chen, Hung Wei Li, Yu Ting Tsai, Chi Wen Chen, S. M. Sze, Fon Shan Yeh, Ya-Hsiang Tai

^*Corresponding author for this work

Department of Photonics

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19 Scopus citations

Abstract

This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr₂ O₃ -based resistive random access memory (RRAM) with Pt/ Cr₂ O₃ /TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/ Cr₂ O₃ and Cr₂ O₃ /TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr₂ O₃ layer.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3518710
State	Published - 28 Jan 2011

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title = "Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory",

abstract = "This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr2 O3 -based resistive random access memory (RRAM) with Pt/ Cr2 O3 /TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/ Cr2 O3 and Cr2 O3 /TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr2 O3 layer.",

author = "Chen, {Shih Cheng} and Chang, {Ting Chang} and Chen, {Shih Yang} and Li, {Hung Wei} and Tsai, {Yu Ting} and Chen, {Chi Wen} and Sze, {S. M.} and Yeh, {Fon Shan} and Ya-Hsiang Tai",

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doi = "10.1149/1.3518710",

language = "English",

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journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2",

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Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory. / Chen, Shih Cheng; Chang, Ting Chang; Chen, Shih Yang; Li, Hung Wei; Tsai, Yu Ting; Chen, Chi Wen; Sze, S. M.; Yeh, Fon Shan; Tai, Ya-Hsiang.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 2, 28.01.2011.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory

AU - Chen, Shih Cheng

AU - Chang, Ting Chang

AU - Chen, Shih Yang

AU - Li, Hung Wei

AU - Tsai, Yu Ting

AU - Chen, Chi Wen

AU - Sze, S. M.

AU - Yeh, Fon Shan

AU - Tai, Ya-Hsiang

PY - 2011/1/28

Y1 - 2011/1/28

N2 - This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr2 O3 -based resistive random access memory (RRAM) with Pt/ Cr2 O3 /TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/ Cr2 O3 and Cr2 O3 /TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr2 O3 layer.

AB - This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr2 O3 -based resistive random access memory (RRAM) with Pt/ Cr2 O3 /TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/ Cr2 O3 and Cr2 O3 /TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr2 O3 layer.

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U2 - 10.1149/1.3518710

DO - 10.1149/1.3518710

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VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -

Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory

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