Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory

Shih Cheng Chen*, Ting Chang Chang, Shih Yang Chen, Hung Wei Li, Yu Ting Tsai, Chi Wen Chen, S. M. Sze, Fon Shan Yeh, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr2 O3 -based resistive random access memory (RRAM) with Pt/ Cr2 O3 /TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/ Cr2 O3 and Cr2 O3 /TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr2 O3 layer.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
StatePublished - 28 Jan 2011

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