Carrier recombination at grain boundaries and the effective recombination velocity

Wei Hwang*, E. Poon, H. C. Card

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

The recombination of excess minority carriers at grain boundaries, or other interfaces with space-charge regions, is treated theoretically for general energy distributions of interface states (recombination centers). The distinction is made between minority carrier recombination velocity at the (grain-boundary) interface itself, and the effective recombination velocity for the collection of these carriers by the adjacent space-charge region. Calculations of the effective recombination velocity are made, as a function of the excess minority-carrier concentration at the edge of the space-charge region, since this is the quantity of most convenience for device modelling.

Original languageEnglish
Pages (from-to)599-603
Number of pages5
JournalSolid State Electronics
Volume26
Issue number6
DOIs
StatePublished - 1 Jan 1983

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