Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

F. Lime*, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

Advanced channel N and P MOSFETs with HfO2 gate dielectric and metal gate have been fabricated and exhibit high performance. The effective mobility has been characterized at various temperatures for NMOS and PMOS devices. The electron mobility is lower than in SiO2, whereas the hole mobility is relatively unaffected at room temperature but also degraded at low temperatures. The mobility degradation after constant voltage stress suggests a more important Coulomb scattering contribution to mobility as compared to SiO2.

Original languageEnglish
Pages (from-to)1617-1621
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number10
DOIs
StatePublished - Oct 2003

Keywords

  • HfO
  • High-k dielectrics
  • Mobility
  • MOSFET

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    Lime, F., Oshima, K., Cassé, M., Ghibaudo, G., Cristoloveanu, S., Guillaumot, B., & Iwai, H. (2003). Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric. Solid-State Electronics, 47(10), 1617-1621. https://doi.org/10.1016/S0038-1101(03)00176-X