Carrier gas effects on the SiGe quantum dots formation

C. H. Lee; C. Y. Yu; C. M. Lin; C. W. Liu; H. Lin; Wen-Hao Chang

doi:10.1016/j.apsusc.2008.02.152

Carrier gas effects on the SiGe quantum dots formation

C. H. Lee, C. Y. Yu, C. M. Lin, C. W. Liu^*, H. Lin, Wen-Hao Chang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

SiGe quantum dots (QDs) grown by ultra-high vacuum chemical vapor deposition using H ₂ and He carrier gases are investigated and compared. SiGe QDs using He carrier gas have smaller dot size with a better uniformity in terms of dot height and dot base as compared to the H ₂ carrier gas. There is a higher Ge composition and less compressive strain in the SiGe QDs grown in He than in H ₂ as measured by Raman spectroscopy. The Ge content is higher for He growth than H ₂ growth due to hydrogen induced Si segregation and the lower interdiffusivity caused by the more strain relaxation in the He-grown SiGe dots. The photoluminescence also confirms more compressive strain for H ₂ growth than He growth. Hydrogen passivation and Ge-H cluster formation play an important role in the QDs growth.

Original language	English
Pages (from-to)	6257-6260
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.152
State	Published - 30 Jul 2008

Keywords

Carrier gas effect
Hydrogen passivation
SiGe quantum dot
Surface mobility
UHVCVD

Access to Document

10.1016/j.apsusc.2008.02.152

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Carrier gas effects on the SiGe quantum dots formation'. Together they form a unique fingerprint.

Cite this

Lee, C. H., Yu, C. Y., Lin, C. M., Liu, C. W., Lin, H., & Chang, W-H. (2008). Carrier gas effects on the SiGe quantum dots formation. Applied Surface Science, 254(19), 6257-6260. https://doi.org/10.1016/j.apsusc.2008.02.152

@article{041054520a65445bbf8d3bda2037eeca,

title = "Carrier gas effects on the SiGe quantum dots formation",

abstract = " SiGe quantum dots (QDs) grown by ultra-high vacuum chemical vapor deposition using H 2 and He carrier gases are investigated and compared. SiGe QDs using He carrier gas have smaller dot size with a better uniformity in terms of dot height and dot base as compared to the H 2 carrier gas. There is a higher Ge composition and less compressive strain in the SiGe QDs grown in He than in H 2 as measured by Raman spectroscopy. The Ge content is higher for He growth than H 2 growth due to hydrogen induced Si segregation and the lower interdiffusivity caused by the more strain relaxation in the He-grown SiGe dots. The photoluminescence also confirms more compressive strain for H 2 growth than He growth. Hydrogen passivation and Ge-H cluster formation play an important role in the QDs growth.",

keywords = "Carrier gas effect, Hydrogen passivation, SiGe quantum dot, Surface mobility, UHVCVD",

author = "Lee, {C. H.} and Yu, {C. Y.} and Lin, {C. M.} and Liu, {C. W.} and H. Lin and Wen-Hao Chang",

year = "2008",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2008.02.152",

language = "English",

volume = "254",

pages = "6257--6260",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - Carrier gas effects on the SiGe quantum dots formation

AU - Lee, C. H.

AU - Yu, C. Y.

AU - Lin, C. M.

AU - Liu, C. W.

AU - Lin, H.

AU - Chang, Wen-Hao

PY - 2008/7/30

Y1 - 2008/7/30

N2 - SiGe quantum dots (QDs) grown by ultra-high vacuum chemical vapor deposition using H 2 and He carrier gases are investigated and compared. SiGe QDs using He carrier gas have smaller dot size with a better uniformity in terms of dot height and dot base as compared to the H 2 carrier gas. There is a higher Ge composition and less compressive strain in the SiGe QDs grown in He than in H 2 as measured by Raman spectroscopy. The Ge content is higher for He growth than H 2 growth due to hydrogen induced Si segregation and the lower interdiffusivity caused by the more strain relaxation in the He-grown SiGe dots. The photoluminescence also confirms more compressive strain for H 2 growth than He growth. Hydrogen passivation and Ge-H cluster formation play an important role in the QDs growth.

AB - SiGe quantum dots (QDs) grown by ultra-high vacuum chemical vapor deposition using H 2 and He carrier gases are investigated and compared. SiGe QDs using He carrier gas have smaller dot size with a better uniformity in terms of dot height and dot base as compared to the H 2 carrier gas. There is a higher Ge composition and less compressive strain in the SiGe QDs grown in He than in H 2 as measured by Raman spectroscopy. The Ge content is higher for He growth than H 2 growth due to hydrogen induced Si segregation and the lower interdiffusivity caused by the more strain relaxation in the He-grown SiGe dots. The photoluminescence also confirms more compressive strain for H 2 growth than He growth. Hydrogen passivation and Ge-H cluster formation play an important role in the QDs growth.

KW - Carrier gas effect

KW - Hydrogen passivation

KW - SiGe quantum dot

KW - Surface mobility

KW - UHVCVD

UR - http://www.scopus.com/inward/record.url?scp=45049083677&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.152

DO - 10.1016/j.apsusc.2008.02.152

M3 - Article

AN - SCOPUS:45049083677

VL - 254

SP - 6257

EP - 6260

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 19

ER -