Carrier dynamics of type-II InAs / GaAs quantum dots covered by a thin Ga As1-x Sbx layer

Wen-Hao Chang*, Yu An Liao, Wei Ting Hsu, Ming Chih Lee, Pei Chin Chiu, Jen Inn Chyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

Carrier dynamics of InAsGaAs quantum dots (QDs) covered by a thin Ga As1-x Sbx layer were investigated by time-resolved photoluminescence (PL). Both the power dependence of PL peak shift and the long decay time constants confirm the type-II band alignment at the GaAsSb-InAs interface. Different recombination paths have been clarified by temperature dependent measurements. At lower temperatures, the long-range recombination between the QD electrons and the holes trapped by localized states in the GaAsSb layer is important, resulting in a non-single-exponential decay. At higher temperatures, optical transitions are dominated by the short-range recombination with the holes confined to the band-bending region surrounding the QDs.

Original languageEnglish
Article number033107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
StatePublished - 21 Jul 2008

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