Carrier dynamics in Zn x Cd 1-x O films grown by molecular beam epitaxy

F. J. Cheng*, Y. C. Lee, S. Y. Hu, Y. C. Lin, K. K. Tiong, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, the carrier dynamics in Zn 1-x Cd x O thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

Original languageEnglish
Article number012005
JournalIOP Conference Series: Materials Science and Engineering
Volume131
Issue number1
DOIs
StatePublished - 6 Jun 2016
Event4th International Conference on Manufacturing, Optimization, Industrial and Material Engineering, MOIME 2016 - Bali, Indonesia
Duration: 19 Mar 201620 Mar 2016

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