Carrier dynamics in InN nanorod arrays

Hyeyoung Ahn*, Chih Cheng Yu, Pyng Yu, Jau Tang, Yu Liang Hong, Shangjr Gwo

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (̃30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures.

Original languageEnglish
Pages (from-to)769-775
Number of pages7
JournalOptics Express
Volume20
Issue number2
DOIs
StatePublished - 16 Jan 2012

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    Ahn, H., Yu, C. C., Yu, P., Tang, J., Hong, Y. L., & Gwo, S. (2012). Carrier dynamics in InN nanorod arrays. Optics Express, 20(2), 769-775. https://doi.org/10.1364/OE.20.000769