Carrier dynamics in dilute II-VI oxide highly mismatched alloys

Yan Cheng Lin, Wu-Ching Chou, Jen Inn Chyi, Tooru Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices V
PublisherSPIE
ISBN (Print)9780819499004
DOIs
StatePublished - 1 Jan 2014
Event5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States
Duration: 2 Feb 20145 Feb 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8987
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference5th Annual Oxide Based Materials and Devices Conference
CountryUnited States
CitySan Francisco, CA
Period2/02/145/02/14

Keywords

  • Carrier dynamics
  • Highly mismatched alloys
  • II-VI oxides
  • Intermediate band
  • Time-resolved photoluminescence
  • ZnSeO
  • ZnTeO

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