Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes

Jenn-Fang Chen*, P. Y. Wang, J. S. Wang, C. Y. Tsai, N. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance-voltage data but from resistance-capacitance time constant effect observed in capacitance-frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap.

Original languageEnglish
Pages (from-to)1369-1373
Number of pages5
JournalJournal of Applied Physics
Issue number3
StatePublished - 1 Feb 2000

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