Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

Hyeyoung Ahn*, C. H. Shen, C. L. Wu, S. Gwo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The refractive index and optical absorption of wurzite InN epilayers grown on Si(111) substrates with a β-Si3N4/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.

Original languageEnglish
Pages (from-to)69-73
Number of pages5
JournalThin Solid Films
Volume494
Issue number1-2
DOIs
StatePublished - 3 Jan 2006

Keywords

  • Buffer layer
  • Energy bandgap
  • InN
  • Refractive index
  • Spectroscopic ellipsometry (SE)

Fingerprint Dive into the research topics of 'Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry'. Together they form a unique fingerprint.

Cite this