Carrier-carrier scattering: An experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wells

Kien-Wen Sun*, C. K. Sun, J. C. Wang, S. Y. Wang, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations


We have studied carrier dynamics among highly nonequilibrium career distributions generated with femtosecond laser pulses in Be:AlxGa1-xAs/GaAs quantum wells with different well width at hot carrier densities between 109 and 1011 cm-2. The spectra, at moderately high densities (≥1010 cm-2) indicate that the initially narrow electron distribution is altered in a time less than or equal to the LO-phonon emission time, as a result of rapid carrier-carrier scattering. At an excitation density of about 1010 cm-2, the carrier-carrier scattering rate is faster in narrower quantum wells. By measuring the intensity of the unrelaxed peak, it is possible to determine the relative rates of carrier-carrier scattering and LO-phonon emission. Our results indicate that carrier-carrier scattering becomes as significant as LO-phonon emission at a density of about 1×1010 cm-2 in the 5 nm quantum wells.

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalSolid State Communications
Issue number6
StatePublished - 28 Jun 2000

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