Carrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer-Weber and Stranski-Krastanow growth modes

M. E. Lee, Y. C. Yeh, Y. H. Chung, C. L. Wu, C. S. Yang, Wu-Ching Chou, C. T. Kuo, D. J. Jang*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The carrier capture and relaxation of type II ZnTe/ZnSe quantum dots have been investigated with ultrafast time-resolved photoluminescence upconversion. The carrier capture times were 7 and 38 ps for the Volmer-Weber mode and Stranski-Krastanow mode, respectively. We found that the carrier relaxation of QDs exhibits faster decay under the Volmer-Weber growth mode than under the Stranski-Krastanow growth mode. We attribute the difference of carrier relaxation to the wetting layer formed in the Stranski-Krastanow growth mode.

Original languageEnglish
Pages (from-to)422-426
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume26
Issue number1-4
DOIs
StatePublished - 1 Feb 2005
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: 10 May 200413 May 2004

Keywords

  • Auger process
  • Carrier capture
  • Carrier relaxation
  • Time-resolved photoluminescence
  • Type II quantum dots

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