A method for synthesis of CNTs at low temperature using thermal CVD is proposed. A multi-layered catalyst, Co/Ti/Al, has been successfully utilized to synthesize carbon nanotubes at 500T by thermal CVD via modifying the flow rate of reaction gases. The flow rates of ethylene, hydrogen, and nitrogen are determined to be 125, 10, and 1000 seem to improve the growth and field emission characteristics of CNTs at low temperature. Moreover, a novel self-focusing gated device was proposed to resolve the problem of electron beam divergence.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2008|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 20 May 2008 → 21 May 2008