@inproceedings{536e016de69e4fd5b9427451c8f376ff,
title = "Capacitorless DRAM cell on SOI substrate",
abstract = "We propose a capacitorless DRAM (CDRAM) cell on SOI substrate with large READ current (>100μA/μm), small cell size, and simple fabrication process. PISCES simulations are used to analyze the memory cell operations. The CDRAM cell size is that of a transistor, which makes it very attractive for high density memory applications. Since the fabrication process of CDRAM is compatible with that of the general-purpose SOI CMOS and complementary BiCMOS process, CDRAM can also be used for integrated on-chip memory and is an interesting candidate as the technology driver of SOI VLSI.",
author = "Wann, {Hsing Jen} and Chen-Ming Hu",
year = "1993",
month = dec,
day = "1",
doi = "10.1109/IEDM.1993.347280",
language = "English",
isbn = "0780314506",
series = "Technical Digest - International Electron Devices Meeting",
publisher = "Publ by IEEE",
pages = "635--638",
editor = "Anon",
booktitle = "Technical Digest - International Electron Devices Meeting",
note = "null ; Conference date: 05-12-1993 Through 08-12-1993",
}