Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC

Ming-Dou Ker*, Chung-Yu Wu, Tao Cheng, Hun Hsien Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

Capacitor-couple technique used to lower snapback-trigger voltage and to ensure uniform ESD current distribution in deep-submicron CMOS on-chip ESD protection circuit is proposed. The coupling capacitor is realized by a poly layer right under the wire-bonding metal pad without increasing extra layout area to the pad. A timing-original design model has been derived to calculate the capacitor-couple efficiency of this proposed ESD protection circuit. Using this capacitor-couple ESD protection circuit, the thinner gate oxide of CMOS devices in deep-submicron low-voltage CMOS ASIC can be effectively protected.

Original languageEnglish
Pages (from-to)307-321
Number of pages15
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume4
Issue number3
DOIs
StatePublished - 1 Dec 1996

Fingerprint Dive into the research topics of 'Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC'. Together they form a unique fingerprint.

Cite this