Capacitance Modeling in III-V FinFETs

Chandan Yadav, Juan Pablo Duarte, Sourabh Khandelwal, Amit Agarwal, Chen-Ming Hu, Yogesh Singh Chauhan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacitance with applied gate voltage including the steplike behavior with sub-band population. The presented model is in excellent agreement with the self-consistent Schrödinger-Poisson simulation data of InGaAs channel double-gate MOSFET.

Original languageEnglish
Article number7293166
Pages (from-to)3892-3897
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 6 Oct 2015


  • Fermi-Dirac statistics
  • FinFETs
  • III-V
  • quantum capacitance.

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