Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures

Jenn-Fang Chen*, Nie Chuan Chen, Pai Yong Wang, Jiin Shung Wang, Chi Ming Weng

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The electrical properties of annealed low-temperature GaAs are studied by investigating the frequency-dependent capacitance of n-LT-i-p structures with the low-temperature (LT) layers grown at different temperatures. Relative to the sample grown at 610 °C, the samples grown at 200, 300 and 400 °C show significant capacitance dispersions over frequency which is explained by the emission of carriers from traps. Based on a proposed band diagram where a dominating trap at 0.66-0.74 eV exists in the LT layers, the high-frequency dispersion is shown to be affected by resistance-capacitance (RC) time constant effects. From the mid-frequency capacitance versus voltage characteristics, the concentrations of the occupied traps are estimated to be ≈1017 cm-3 for samples grown at 200, 300 and 400 °C, which are found to be consistent with those obtained from analyzing the current-voltage characteristics of n+-LT-n+ structures.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number12 A
DOIs
StatePublished - 1 Dec 1999

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