Calibration 90 nm node RF mosfets, including stress degradation

H. L. Kao*, C. H. Kao, Albert Chin, C. C. Liao

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Using a microstrip line layout, a low minimum noise figure (NF min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak fT of 152 GHz, coinciding with the peak transconductance (g m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress.

Original languageEnglish
Pages (from-to)604-607
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume49
Issue number3
DOIs
StatePublished - 1 Mar 2007

Keywords

  • f
  • Model
  • MOSFETs
  • NF
  • Stress

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