Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method

Ta-Hui Wang*, K. Hess

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

The electron velocity distribution is calculated for an idealized model of the high electron mobility transistor using a many-particle Monte Carlo model and a self-consistent two-dimensional Poisson solver. Hot electron effects, nonstationary effects, and real space transfer are analyzed. The results show that significant velocity overshoot, 2.8×10 7 cm/s at 300 K and 3.7×10 7 cm/s at 77 K exists under the gate and that the velocity overshoot is limited by both k-space transfer and real-space transfer. The values of the overshoot velocities are much smaller than those obtained from the more conventional drift-diffusion model.

Original languageEnglish
Pages (from-to)5336-5339
Number of pages4
JournalJournal of Applied Physics
Volume57
Issue number12
DOIs
StatePublished - 1 Dec 1985

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