Calculation of hole mobility in doped SiGe alloys using a Monte Carlo method with a bond orbital band structure

Tsyr Shyang Liou*, Ta-Hui Wang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Hole mobility in strained Si 1-x Ge x /Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines the k·p and the tight-binding methods with a strain Hamiltonian. The Fermi-Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocity-field characteristics in strained Si 1-x Ge x alloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated.

Original languageEnglish
Pages (from-to)4749-4752
Number of pages4
JournalJournal of Applied Physics
Volume76
Issue number8
DOIs
StatePublished - 1 Dec 1994

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