Hole mobility in strained Si 1-x Ge x /Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines the k·p and the tight-binding methods with a strain Hamiltonian. The Fermi-Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocity-field characteristics in strained Si 1-x Ge x alloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated.