C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al 2O 3 dielectric

Shih Hsuan Tang, Chien I. Kuo, Hai Dang Trinh, Mantu Hudait, Edward Yi Chang*, Ching Yi Hsu, Yung Hsuan Su, Guang Li Luo, Hong Quan Nguyen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al 2O 3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical characteristics of 10 nm Al 2O 3/Ge MOSCAP showed p-type behavior with excellent C-V responses and low leakage current. Interface state density in the order of 10 11 eV -1 cm -2 was determined from the conductance method and the HF plus RTO treatment exhibits better Al 2O 3/Ge interface quality than that of pure HF treatment.

Original languageEnglish
Pages (from-to)16-19
Number of pages4
JournalMicroelectronic Engineering
Volume97
DOIs
StatePublished - 1 Sep 2012

Keywords

  • ALD Al2O3
  • CMOS integration
  • Ge MOSCAP
  • Ge epitaxial film
  • RTO

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