C 60 encapsulation of the Si(111)-(7×7) surface

Hawoong Hong*, W. E. McMahon, P. Zschack, D. S. Lin, R. D. Aburano, H. D. Chen, T. C. Chiang

*Corresponding author for this work

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Abstract

The structure of a Si(111)-(7×7) surface capped by a 200 Å film of C 60 was studied by grazing-incidence x-ray diffraction. The Si(111)-(7×7) reconstruction prepared in vacuum, including the loosely bonded "adatoms" on the surface, is preserved under the C 60 overlayer. This result illustrates that C 60 can be used as an inert cap for surfaces and suggests potentially interesting applications in surface science research and electronic device engineering.

Original languageEnglish
Pages (from-to)3127-3129
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number26
DOIs
StatePublished - 1 Dec 1992

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    Hong, H., McMahon, W. E., Zschack, P., Lin, D. S., Aburano, R. D., Chen, H. D., & Chiang, T. C. (1992). C 60 encapsulation of the Si(111)-(7×7) surface. Applied Physics Letters, 61(26), 3127-3129. https://doi.org/10.1063/1.107982