Buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding

Y. H. Wu*, C. H. Huang, W. J. Chen, C. N. Lin, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 °C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0×1010 cm-2 and 3×1010 eV-1 cm-2, respectively, from capacitance-voltage measurements.

Original languageEnglish
Pages (from-to)2754-2756
Number of pages3
JournalJournal of the Electrochemical Society
Volume147
Issue number7
DOIs
StatePublished - 1 Jul 2000

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