Buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding

Y. H. Wu; C. H. Huang; W. J. Chen; C. N. Lin; Albert Chin

doi:10.1149/1.1393601

Buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding

Y. H. Wu^*, C. H. Huang, W. J. Chen, C. N. Lin, Albert Chin

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 °C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0×10¹⁰ cm^-2 and 3×10¹⁰ eV^-1 cm^-2, respectively, from capacitance-voltage measurements.

Original language	English
Pages (from-to)	2754-2756
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	7
DOIs	https://doi.org/10.1149/1.1393601
State	Published - 1 Jul 2000

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Wu, Y. H., Huang, C. H., Chen, W. J., Lin, C. N., & Chin, A. (2000). Buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding. Journal of the Electrochemical Society, 147(7), 2754-2756. https://doi.org/10.1149/1.1393601

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AU - Huang, C. H.

AU - Chen, W. J.

AU - Lin, C. N.

AU - Chin, Albert

PY - 2000/7/1

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N2 - We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 °C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0×1010 cm-2 and 3×1010 eV-1 cm-2, respectively, from capacitance-voltage measurements.

AB - We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 °C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0×1010 cm-2 and 3×1010 eV-1 cm-2, respectively, from capacitance-voltage measurements.

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