Abstract
We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 °C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0×1010 cm-2 and 3×1010 eV-1 cm-2, respectively, from capacitance-voltage measurements.
Original language | English |
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Pages (from-to) | 2754-2756 |
Number of pages | 3 |
Journal | Journal of the Electrochemical Society |
Volume | 147 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jul 2000 |