A method of forming ultrathin-body silicon on insulator technology MOSFETs is presented. Lateral solid-phase epitaxy of a deposited amorphous film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with in-chip bulk devices.
|Number of pages||2|
|State||Published - 1 Dec 1999|
|Event||Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA|
Duration: 28 Jun 1999 → 30 Jun 1999
|Conference||Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)|
|City||Santa Barbara, CA, USA|
|Period||28/06/99 → 30/06/99|