Bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs

V. Subramanian*, J. Kedzierski, N. Lindert, H. Tam, Y. Su, J. McHale, K. Cao, T. J. King, J. Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

13 Scopus citations

Abstract

A method of forming ultrathin-body silicon on insulator technology MOSFETs is presented. Lateral solid-phase epitaxy of a deposited amorphous film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with in-chip bulk devices.

Original languageEnglish
Pages28-29
Number of pages2
StatePublished - 1 Dec 1999
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 28 Jun 199930 Jun 1999

Conference

ConferenceProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period28/06/9930/06/99

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    Subramanian, V., Kedzierski, J., Lindert, N., Tam, H., Su, Y., McHale, J., Cao, K., King, T. J., Bokor, J., & Hu, C-M. (1999). Bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs. 28-29. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .