@inproceedings{2b6dc72d3c39457c9cb3bc5b1426fc20,
title = "Built-in effective body-bias effect in UTBB hetero-channel MOSFETs and its suppression",
abstract = "This work presents a built-in effective body-bias effect (VBS, eff) in ultra-thin-body and BOX (UTBB) hetero-channel MOSFETs. This effect stems from the discrepancies in the electron affinity, the effective density-of-states, and the band-gap between the high-mobility channel and conventional Si channel. Physical VBS, eff models quantifying this effect are presented for nFET and pFET, respectively. Our study indicates that the DIBL of various hetero-channel devices can be worse than what permittivity predicts because of the built-in forward body-bias effect. Moreover, we have shown that this detrimental effect can be suppressed by the quantum-confinement effect. This effect has to be considered when designing or benchmarking various UTBB hetero-channel MOSFETs.",
keywords = "Dielectric constant, MOSFET, Permittivity, Photonic band gap, Silicon, Substrates, Very large scale integration",
author = "Yu, {Chang Hung} and Pin Su",
year = "2015",
month = sep,
day = "24",
language = "English",
series = "2015 Silicon Nanoelectronics Workshop, SNW 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 Silicon Nanoelectronics Workshop, SNW 2015",
address = "United States",
note = "null ; Conference date: 14-06-2015 Through 15-06-2015",
}