Built-in effective body-bias effect in UTBB hetero-channel MOSFETs and its suppression

Chang Hung Yu, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents a built-in effective body-bias effect (VBS, eff) in ultra-thin-body and BOX (UTBB) hetero-channel MOSFETs. This effect stems from the discrepancies in the electron affinity, the effective density-of-states, and the band-gap between the high-mobility channel and conventional Si channel. Physical VBS, eff models quantifying this effect are presented for nFET and pFET, respectively. Our study indicates that the DIBL of various hetero-channel devices can be worse than what permittivity predicts because of the built-in forward body-bias effect. Moreover, we have shown that this detrimental effect can be suppressed by the quantum-confinement effect. This effect has to be considered when designing or benchmarking various UTBB hetero-channel MOSFETs.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
StatePublished - 24 Sep 2015
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: 14 Jun 201515 Jun 2015

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2015
CountryJapan
CityKyoto
Period14/06/1515/06/15

Keywords

  • Dielectric constant
  • MOSFET
  • Permittivity
  • Photonic band gap
  • Silicon
  • Substrates
  • Very large scale integration

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