Built-in effective body-bias effect in ultra-thin-body hetero-channel III - V-on-Insulator n-MOSFETs

Chang Hung Yu, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

This letter reports a built-in effective body-bias effect in ultra-thin-body (UTB) hetero-channel III-V-on-insulator n-MOSFETs. This effect results from the discrepancies in electron affinity and the effective density-of-states of conduction band between the III-V and conventional Si channels. Our study indicates that, in addition to permittivity, it is the built-in effective body-bias effect that determines the drain-induced-barrier- lowering characteristics of the hetero-channel devices. This intrinsic effect has to be considered when one-to-one comparisons among various UTB hetero-channel MOSFETs regarding the electrostatic integrity are made.

Original languageEnglish
Article number6840963
Pages (from-to)823-825
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number8
DOIs
StatePublished - 1 Jan 2014

Keywords

  • III-V
  • Ultra-thin-body (UTB)
  • drain-induced-barrier-lowering (DIBL)
  • electrostatic integrity (EI)
  • hetero-channel

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