Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

Tien Tung Luong*, Franky Lumbantoruan, Yen Yu Chen, Yen Teng Ho, Yueh Chin Lin, Shane Chang, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature (HLH) AlN buffer reducing the tensile stress in AlN consequently reduces the RF loss.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2017, CSTIC 2017
EditorsSteve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509066940
DOIs
StatePublished - 4 May 2017
Event2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
Duration: 12 Mar 201713 Mar 2017

Publication series

NameChina Semiconductor Technology International Conference 2017, CSTIC 2017

Conference

Conference2017 China Semiconductor Technology International Conference, CSTIC 2017
CountryChina
CityShanghai
Period12/03/1713/03/17

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