Plasma doping process to reduce sheet resistance (Rs) keeping shallow junction depth (Xj) was demonstrated. In-situ Helium pre-amorphization (He-PA) was introduced to plasma doping (PD) method. High dose and ultra-shallow as-doped profiles were optimized by adjusting B2H6 PD conditions. The optical absorption rate in the amorphous layer and Xj was controlled by the He-PA conditions. Advantage of these new techniques to form ultra-shallow p+-n junction were verified by flash lamp annealing (FLA) and laser annealing (All Solid-State Green Laser Annealing: ASLA) for the first time. Excellent results on Rs, Xj and abruptness of profiles were obtained.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 2004|
|Event||2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States|
Duration: 15 Jun 2004 → 17 Jun 2004