B2H6 plasma doping with "in-situ He pre -amorphization"

Y. Sasaki*, C. G. Jin, H. Tamura, B. Mizuno, R. Higaki, T. Satoh, K. Majima, H. Sauddin, K. Takagi, S. Ohmi, K. Tsutsui, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

52 Scopus citations


Plasma doping process to reduce sheet resistance (Rs) keeping shallow junction depth (Xj) was demonstrated. In-situ Helium pre-amorphization (He-PA) was introduced to plasma doping (PD)[1] method. High dose and ultra-shallow as-doped profiles were optimized by adjusting B2H6 PD conditions. The optical absorption rate in the amorphous layer and Xj was controlled by the He-PA conditions. Advantage of these new techniques to form ultra-shallow p+-n junction were verified by flash lamp annealing (FLA) and laser annealing (All Solid-State Green Laser Annealing: ASLA) for the first time. Excellent results on Rs, Xj and abruptness of profiles were obtained.

Original languageEnglish
Pages (from-to)180-181
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 2004
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 15 Jun 200417 Jun 2004

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