@inproceedings{0ba0c8754e4f4e4888e3893e11290dcc,

title = "BSIM6: Symmetric bulk MOSFET model",

abstract = "BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry test and shows correct slopes for harmonic balance simulation. Model has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation. Model is under standardization at Compact Model Council.",

keywords = "Analog, BSIM4, BSIM6, Compact model, MOS-FET, RF, Symmetry",

author = "Chauhan, {Y. S.} and Karim, {M. A.} and S. Venugopalan and S. Khandelwal and P. Thakur and N. Paydavosi and Sachid, {A. B.} and A. Niknejad and Chen-Ming Hu",

year = "2012",

month = aug,

day = "17",

language = "English",

isbn = "9781466562752",

series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",

pages = "724--729",

booktitle = "Nanotechnology 2012",

note = "null ; Conference date: 18-06-2012 Through 21-06-2012",

}